mems gyroscope sensor (159) Online Manufacturer
Temperature Drift: ≤±0.1(°/s/°C)
Nonlinearity: ≤0.05(%FR)
Sleep Current Iop3: 3μA Typ
Storage Temperature TSTG: Storage Temperature TSTG
Output Noise: <0.02(°/s√Hz)
Tolerated Acceleration: 20000(0.1ms)(g)
Output Voltage: 0.66~2.64(V)
G-value Sensitivity: ≤0.02(°/s/g)
Supply Voltage For Interface VDDI: +1.65V~+3.6V
Scale Factor So: 70 LSB/(°/s) ±2% 17920 LSB/(°/s) ±2%
Bias Temperature Coefficient ZRLs: 0.0016(°/s)/℃ (Typ)
Rate Range I: ±400°/s
Input Voltage: 5Vdc
Incoming CurrentmA: <10 MA
Packaging Details: each unit has individual box and all boxes are packed in standard packages or customers requests available
Delivery Time: 5-8 work days
Random Drift: ≤0.03°/h
Power(1 Phase): 7&16000V & Hz
Temperature: -15~100℃
Vibration: 5g
Input Voltage: 5±0.2 V DC
Input Current: ≤100mA
Nonlinearity: ≤0.1(%F.R)
Size: Φ39.5×28.5(mm)
Random Vibration: 6.06g Rms
Bias: ≤0.03
Weight: < 0.4 Oz. [12 Grams]
Scale Factor Over Temperature: < 0.1%/°C
Bias Repeatability: ≤0.15(゜/s)
Cross Coupling: ≤1(°/s)
Power Dissipation: ≤1(W)
Data Updating Rate(can Set)): 2000(Hz)
Send your inquiry directly to us